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Description
Silicon carbide (SiC) has emerged as a scalable, industry-compatible, cost-effective platform for quantum technology, leveraging the maturity of the European semiconductor sector. This presentation reviews recent advancements in SiC colour centres for quantum networking and sensing, focusing on two key systems.
First, I discuss the silicon vacancy (V_Si), which features lifetime-limited photon emission at 20 K. This stability has enabled us to perform state-of-the-art Hong-Ou-Mandel (HOM) experiments and transition to spin-photon entanglement, confirming the V_Si’s relevance for quantum network nodes. Furthermore, I will highlight the use of V_Si centres to control nuclear spin registers with up to 25 qubits, providing a foundation for small-scale quantum computing and error correction. I also address challenges regarding photon count rates through nanophotonic integration and surface passivation.
Second, I introduce the oxygen-vacancy centre (O_C V_Si/PL6), a promising NV-like candidate. We summarise key results, including room-temperature quantum sensing, nuclear spin qubit control, and efficient fabrication via focused ion beam implantation of oxygen and carbon monoxide.
Finally, we provide an overview of the quantum research landscape in Luxembourg, which is centred on wide bandgap semiconductors for the deployment of quantum internet hardware and future sensing activities.